fds6692a n-channel powertrench ? mosfet ?2010 fairchild semiconductor corporation fds6692a rev. a 2 www.fairchildsemi.com 1 fds6692a n-channel powertrench ? mosfet 30v, 9a, 11.5m ? features ? r ds(on) = 11.5m ? , v gs = 10v, i d = 9a ? r ds(on) = 14.5m ? , v gs = 4.5v, i d = 8.2a ? high performance trench technology for extremely low r ds(on) ? low gate charge ? high power and current handling capability ? rohs compliant applications ? dc/dc converters general description this n-channel mosfet has be en designed specifically to improve the overall efficienc y of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. 1 7 5 2 8 4 6 3 s d s s so-8 d d d g january 2010
fds6692a n-channel powertrench ? mosfet fds6692a rev. a 2 www.fairchildsemi.com 2 mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current 9a continuous (t a = 25 o c, v gs = 10v, r ja = 85 o c/w) continuous (t a = 25 o c, v gs = 4.5v, r ja = 85 o c/w) 8.2 a pulsed 48 a e as single pulse avalanche energy (note 1) 79 mj p d power dissipation 1.47 w t j , t stg operating and storage temperature -55 to 150 o c r ja thermal resistance, junction to ambient at 10 seconds (note 3) 50 o c/w r ja thermal resistance, junction to am bient at 1000 seconds (note 3) 85 o c/w device marking device package reel size tape width quantity fds6692a fds6692a so-8 330mm 12mm 2500 units symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 - - v ? b vdss ? t j breakdown voltage temp. coefficient i d = 250 a, referenced to 25 o c -21-mv/ o c i dss zero gate voltage drain current v ds = 24v - - 1 a v gs = 0v t j = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.2 - 2.5 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 o c --5-mv/ o c r ds(on) drain to source on resistance i d = 9a, v gs = 10v - 8.2 11.5 m ? i d = 8.2a, v gs = 4.5v - 11 14.5 i d = 9a, v gs = 10v, t j = 150 o c -1319 c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 1210 1610 pf c oss output capacitance - 330 440 pf c rss reverse transfer capacitance - 138 210 pf r g gate resistance f = 1mhz - 2.0 - ? q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 9a i g = 1.0ma -2229nc q g(5) total gate charge at 5v v gs = 0v to 5v - 12 16 nc q g(th) threshold gate charge v gs = 0v to 1v - 0.93 1.2 nc q gs gate to source gate charge - 3 - nc q gs2 gate charge threshold to plateau - 2.1 - nc q gd gate to drain ?miller? charge - 4.8 - nc
fds6692a n-channel powertrench ? mosfet fds6692a rev. a 2 www.fairchildsemi.com 3 switching characteristics (v gs = 10v) drain-source diode characteristics notes: 1: starting t j = 25c, l = 0.3 mh, i as = 23 a, v dd = 27 v, v gs = 10v. 2: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user?s board design. 3: r ja is measured with 1.0 in 2 copper on fr-4 board t on turn-on time v dd = 15v, i d = 9a v gs = 10v, r gs = 6.2 ? - - 60 ns t d(on) turn-on delay time - 8 - ns t r rise time - 32 - ns t d(off) turn-off delay time - 33 - ns t f fall time - 13 - ns t off turn-off time - - 69 ns v sd source to drain diode voltage i sd = 9a - - 1.25 v i sd = 2.1a - - 1.0 v t rr reverse recovery time i sd = 9a, di sd /dt=100a/ s- -27ns q rr reverse recovered charge i sd = 9a, di sd /dt=100a/ s- -17nc
fds6692a n-channel powertrench ? mosfet fds6692a rev. a 2 www.fairchildsemi.com 4 typical characteristics t j = 25c unless otherwise noted figure 1. i d , drain current (a) 00.2 0.5 v ds , drain to source voltage (v) 0.1 0.3 0.4 6 9 15 24 0 21 18 12 3 pulse duration = 80 s duty cycle = 0.5% max 10v 5.0v 4.0v 3.5v 3.0v waveforms in descending order: on region characteristics figure 2. 24 012 i d , drain current (a) 6 20 1.8 2.8 0.8 10v 4.5v 4.0v r ds(on) , normalized drain to source on-resistance 1 1.2 1.4 1.6 2 2.2 2.4 2.6 pulse duration = 80 s duty cycle = 0.5% max 5.0v 3.5v 3.0v on-resistance variation with drain current and gate voltage figure 3. - 80 40 160 t j , junction temperature ( o c) 0 - 40 80 120 1.0 1.4 0.6 r ds(on), normalized drain to source on-resistance 1.6 1.2 0.8 i d = 9a v gs =10v pulse duration = 80 s duty cycle = 0.5% max on resistance variation with temperature figure 4. 4 28 10 6 0.008 0.01 0.006 0.012 0.014 0.016 0.018 0.02 i d =9a pulse duration = 80 s duty cycle = 0.5% max t j =25 o c t j =150 o c v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) on-resistance variation with gate-to-source voltage figure 5. 0 4 v gs , gate to source voltage (v) 6 9 15 24 0 i d , drain current (a) 21 18 12 3 t j = -55 o c pulse duration = 80 s duty cycle = 0.5% max 3 2 1 v ds = 6v t j = 150 o c t j = 25 o c transfer characteristics figure 6. v sd , body diode forward voltage 0 0.6 0.8 1.0 0.4 0.2 0.1 1 100 0.001 i s , reverse current (a) 10 0.01 1.2 i s = 9a t j = 150 o c t j = 25 o c t j = - 55 o c body diode forward voltage variation with source current and temperature
fds6692a n-channel powertrench ? mosfet fds6692a rev. a 2 www.fairchildsemi.com 5 figure 7. gate charge characteri 5 015 25 q g , gate charge (nc) 10 20 4 6 10 0 v gs , gate- source voltage 8 2 waveforms in descending order: id = 9a id = 1a vdd =15v stics figure 8. capacitance characteristics 1000 2000 0.1 10 100 c oss c rss v ds , drain to source voltage (v) capacitance (pf) 1 30 0.03 c iss f = 1mhz v gs = 0v figure 9. unclamped inductive switching capability figure 10. 0.01 0.1 1 100 1 10 100 v ds , drain to source voltage (v) i d , drain tcurrent (a) 0.1 100 s 1ms dc 10ms single pulse t j = max rated t a = 25 o c operation in this area may be limited by r ds(on) 10 safe operating area figure 11. maximum continuous drain current vs ambient temperature 075 150 t a , ambient temperature ( o c) 50 100 125 0 i d , drain tcurrent (a) 10 v gs = 10v r ja = 85 o c/w 8 6 2 4 1 3 5 7 9 current limited by package v gs = 4.5v figure 12. single maximum power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 p ( pk ) , peak transient power ( w ) t, pulse width (s) single pulse r ja = 85 o c/w t a = 25 o c 2000 typical characteristics t j = 25c unless otherwise noted 0.01 0.1 1 1 0 10 0 1 00 0 1 10 20 t j = 1 0 0 o c t j = 2 5 o c t j = 15 0 o c t av , t i m e i n a va l a n che ( m s ) i as , av alanche curre nt (a)
figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 normalized thermal impedance z ja t rectangular pulse duration d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x r ja + t c 2 fds6692a n-channel powertrench ? mosfet fds6692a rev. a 2 www.fairchildsemi.com 6
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